Experimental and numerical studies on temperature and flow fields in crystal growth from phosphoric acid solutionsBARZ, R.-U; GRASSL, M.Journal of crystal growth. 2003, Vol 249, Num 1-2, pp 345-353, issn 0022-0248, 9 p.Article

The mechanism of inclusion formation during crystal growth by the travelling heater methodBARZ, R. U; GILLE, P.Journal of crystal growth. 1995, Vol 149, Num 3-4, pp 196-200, issn 0022-0248Article

Study of growth faces in hydrothermally obtained beryl single crystals using (556)-orientated seedsBEKKER, T. B; BARZ, R.-U.Crystal growth & design. 2007, Vol 7, Num 9, pp 1898-1903, issn 1528-7483, 6 p.Article

Reducing inversion twinning in single crystal growth of GaPO₄GRASSL, M; BARZ, R.-U; GILLE, P et al.Crystal research and technology (1979). 2002, Vol 37, Num 6, pp 531-539, issn 0232-1300Article

Studies on the solubility of GaPO₄ in phosphoric acidBARZ, R.-U; GRASSL, M; GILLE, P et al.Journal of crystal growth. 2002, Vol 245, Num 3-4, pp 273-277, issn 0022-0248Article

X-ray Topography of Hydrothermally Grown Emerald Single Crystals Using Laboratory and Synchrotron SourcesBARZ, R.-U; BEKKER, T. B.Crystal growth & design. 2009, Vol 9, Num 2, pp 671-675, issn 1528-7483, 5 p.Article

Etch studies on GaPO₄ single crystalsGRASSL, M; BARZ, R.-U; GILLE, P et al.Journal of crystal growth. 2000, Vol 220, Num 4, pp 522-530, issn 0022-0248Article

High-temperature phase transitions of gallium orthophosphate (GaPO₄)BARZ, R.-U; SCHNEIDER, J; GILLE, P et al.Zeitschrift für Kristallographie. 1999, Vol 214, Num 12, pp 845-849, issn 0044-2968Article

Growth of gallium orthophosphate single crystals under hydrothermal conditionsBARZ, R.-U; GRASSL, M; GILLE, P et al.Crystal research and technology (1979). 1999, Vol 34, Num 9, pp 1121-1127, issn 0232-1300Article

Polymorph stability and phase transitions of trigonal Al_1-xGa_xPO₄ mixed crystalsBARZ, R.-U; DAVID, F; SCHNEIDER, J et al.Zeitschrift für Kristallographie. 2001, Vol 216, Num 9, pp 501-508, issn 0044-2968Article

A numerical study of convection during THM growth of CdTe with ACRTBARZ, R. U; SABHAPATHY, P; SALCUDEAN, M et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 566-577, issn 0022-0248Conference Paper

Modelling of the isothermal melt flow due to rotating magnetic fields in crystal growthBARZ, R. U; GERBETH, G; WUNDERWALD, U et al.Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 410-421, issn 0022-0248Conference Paper

Structural and surface topography analysis of AlN single crystals grown on 6H―SiC substratesSUMATHI, R. R; BARZ, R. U; STRAUBINGER, T et al.Journal of crystal growth. 2012, Vol 360, pp 193-196, issn 0022-0248, 4 p.Conference Paper

Hydrothermal liquid phase epitaxy of gallium orthophosphate on quartz crystal substratesGLEICHMANN, H; RICHERT, H; HERGT, R et al.Crystal research and technology (1979). 2001, Vol 36, Num 11, pp 1181-1188, issn 0232-1300Article

Growth of decagonal AlCoCu quasicrystals onto AlCoNi seedsGILLE, P; DREIER, P; BARZ, R.-U et al.Journal of alloys and compounds. 2002, Vol 342, Num 1-2, pp 7-12, issn 0925-8388Conference Paper

Czochralski growth and characterization of large decagonal Al-Co-Ni quasicrystalsGRÄBER, M; BARZ, R.-U; DREIER, P et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2000, Vol 294-96, pp 143-146, issn 0921-5093Conference Paper

Growth striations in GaPO₄ single crystals obtained under hydrothermal conditionsBARZ, R.-U; GRASSL, M; GILLE, P et al.Journal of crystal growth. 2002, Vol 237-39, pp 843-847, issn 0022-0248, 1Conference Paper